The P-channel power MOSFET of IXYS retail all features of the comparable N-channel power MOSFET such as very fast switching, voltage control, ease of paralleling and excellent temperature stability.

Using the latest generation of trench and polar power MOSFET technologies, both trench and polar P-channel power MOSFETs have been developed that retain all the features of comparable N-channel power ...

Just-released TrenchFET p-channel Gen III power MOSFETs offer the lowest on-resistance for −12- and −20-V devices at −4.5- and −2.5-V gate drives in 3.0- by 1.9-mm PowerPAK ChipFET and 3.3- by 3.3-mm ...

Santa Clara, CA and Kyoto, Japan, Feb. 10, 2021 (GLOBE NEWSWIRE) -- ROHM today announced a 24-model lineup of 24V input, -40V / -60V withstand voltage P-channel MOSFETs available in both single ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...

The classic metal–oxide–semiconductor field-effect transistor (MOSFET) is the workhorse of the microelectronics industry. MOSFETs are the building blocks of microprocessors, memory chips and ...

Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...

The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...